| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor wafer having relaxed lattice strain, high free carrier mobility and high sheet resistance by forming an active layer on a semi-insulating GaAs substrate through an In-containing intermediate layer grown on the surface of the GaAs substrate. SOLUTION: This compound semiconductor wafer is obtained by growing an intermediate layer 2 comprising InGaAs on the surface of a substrate 1 comprising semi-insulating GaAs, and then growing an active layer comprising n type InGaAs on the surface of the intermediate layer. The intermediate layer 2 is grown so that the mixed crystal formation of In the growth direction from the substrate increases, and contains impurities for catching carriers. A hall element is produced by forming a cross motion layer from the intermediate layer 2 and the active layer 3 of the wafer in a photoliso process, disposing gold-surfaced electrode at the tips of the cross motion layer in an ohmic electrode-forming process, and subsequently applying a series of processings such as the formation of an insulated layer, dicing, die bonding, wire bonding and resin molding.
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