HEATING RESISTOR AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a heating resistor having a protecting film of a film thickness of 100-500Åand a high resistance to cavitation damage and electrolytic etching and its manufacture. SOLUTION: An approximately 7000Åfilm of a double-layer structure of TaSiO is first formed by a thin film formation technique, on which an electrode film is formed. An electrode pattern of a common electrode 18 and an individual wiring electrode 21 is formed to the electrode film by a photolithographic technique, and a heating element pattern of a 40μm×40μm heating part 22 is formed to a resistor film of the double-layer structure. An Si/Ta mole ratio of an upper layer 22b of the resistor film of the double-layer structure is set smaller than an Si/Ta mole ratio of a lower layer 22a. The upper layer 22b including much Ta is oxidized with heat by annealing (heat treatment) for 10 minutes at a substrate temperature of 400 deg.C. In consequence, a 100-500Åautoxidation protecting layer 22b-1 of a TaSiO film is formed on the heating part 22.