Proximity lithography device

摘要

A proximity lithography device using a modified electric field. In the preferred embodiment, the modified electric field is formed by illuminating a tip of a scanning probe in close proximity of the resist surface with a laser. In an alternate embodiment, the modified electric field is formed by positioning a tip of a scanning probe within close proximity of the resist surface, where illumination from a laser is in total internal reflection within the resist. The proximity of the tip to the resist surface creates a tunneling effect and forms the modified electric field. The modified electric field alters the resist for lithographic patterning.