发明名称 |
Method of fabricating thin film transistors |
摘要 |
A method is provided for fabricating a thin film transistor on a substrate. The method includes the steps of forming an active layer having a channel region on the substrate, forming an impurity-blocking mask covering the channel region and portions of the active layer outside the channel region adjacent the channel region, and doping impurities of a first conductivity type at a high density into portions of the active layer uncovered by the impurity-blocking mask to form impurity-doped regions in the active layer. The method further includes the steps of removing the impurity-blocking mask and thereafter performing a plasma treatment on the resultant structure using a plasma gas containing impurities of the first conductivity type to form LDD regions in the active layer between the channel region and the impurity-doped regions.
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申请公布号 |
US6077730(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19980022415 |
申请日期 |
1998.02.12 |
申请人 |
LG ELECTRONICS, INC. |
发明人 |
LEE, SANG-GUL;YEO, JU-CHEON;HA, YONG-MIN |
分类号 |
H01L29/786;H01L21/336;H01L21/84;(IPC1-7):H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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