| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride sintered compact capable of being produced by a method excellent in productivity, excellent in mechanical strength, and having a high coefficient of thermal conductivity over 100 W/mK. SOLUTION: The density of the dislocation in a single particle of silicon nitride sintered compact is controlled so as to be <=10 μm/μm3. The control of the density of the dislocation is carried out by suppressing the width of a half value in the X-ray diffraction of a base powder to low, or by the method of not applying a pressure of >100 kgf/cm2 in the steps before obtaining the sintered compact, or by sintering with nitrifying reaction of Si powder. The silicon nitride sintered compact with the density of the dislocation controlled so as to be <=5 μm/μm3 has >=140 W/mK high temperature conductivity and >=100 kgf/mm2 flexural strength. |
