发明名称 |
Active matrix display devices and methods of manufacturing the active matrix display devices |
摘要 |
The invention provides a peripheral drive circuit integrated active matrix LCD device in which thin-film transistors have different characteristics optimized for individual circuits of the active matrix LCD device. A pixel matrix portion includes thin-film transistors, each having offset gate regions 134 and 136 produced in a non-self-alignment manner, an n-channel driver portion includes thin-film transistors, each having lightly-doped regions 128 and 130 produced in a combination of the non-self-alignment manner and a self-alignment manner, and a p-channel driver portion includes thin-film transistors produced in a self-alignment manner. This construction makes it possible to arrange the thin-film transistors having characteristics required by the individual circuits.
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申请公布号 |
US6078060(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19970933817 |
申请日期 |
1997.09.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
SHIBUYA, TSUKASA;YOSHINOUCHI, ATSUSHI;ZHANG, HONGYONG;KUBO, NOBUO |
分类号 |
H01L29/786;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;(IPC1-7):H01L27/01;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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