| 发明名称 |
Reaction-bonded silicon nitride-based materials and method for producing the same |
| 摘要 |
The invention relates to reaction-bonded silicon nitride-based materials which contain silicon nitride (Si3N4), silicon carbide (SiC) and silicon oxynitride (Si2N2O) as crystalline phases, which have a phase consistency of silicon of </= 1 % and very good mechanical properties and are very stable in oxidizing conditions at high temperatures. The invention also relates to a method for producing these materials from a mixture of silicon, silicon nitride and organic silicon compounds (preferably polysiloxanes and/or polycarbosilanes) by thermally treating said mixture in a nitrogen-containing atmosphere, so that the organic silicon compounds are pyrolized and nitrided in the presence of silicon. The invention also relates to the use of the materials for producing ceramic components. |
| 申请公布号 |
AU3148600(A) |
申请公布日期 |
2000.06.19 |
| 申请号 |
AU20000031486 |
申请日期 |
1999.12.01 |
| 申请人 |
CFI CERAMICS FOR INDUSTRY GMBH & CO. KG |
发明人 |
LOTHAR SCHONFELDER;GERHARD WOTTING |
| 分类号 |
C04B35/589;C04B35/591;C04B35/593 |
主分类号 |
C04B35/589 |
| 代理机构 |
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