| 摘要 |
A bit line sensing circuit of a semiconductor memory device is disclosed which includes a pull-up control signal generator that enables the peak current to be small by supplying to the P sense amplifier a pull-up voltage of the low level in an initial sensing process. When the peak current is stabilized, the pull-up control signal generator then reduces the time required for raising the pull-up voltage by very quickly raising the voltage of the pull-up control signal. This results in the advantages that the peak current can be greatly reduced without slowing sensing speed, and voltage noise caused from peak currents can be eliminated. |
