发明名称
摘要 <p>PURPOSE:To obtain stable and effective contact between a transparent conductive film covered and an insulating film with a wiring for applying electric power to the conductive film by forming the wiring to be brought into contact with the transparent conductive film converted with the insulating film through a contact hole by the same film as the conductive film. CONSTITUTION:A coplanar type thinnly molded transistor(TR) is formed on the glass substrate 19 and a signal line 25 corresponding to a signal line 12 and a picture element electrode 26 are formed. An insulating film 27 is formed on the surface of the electrode 26, contact holes 28, 29 are perforated on the inter-layer insulating film 27 and the same film as the transparent conductive film 25 is formed on the holes 28, 29. The film is patterned to form a scanning line 31 corresponding to a wiring 30 and a scanning line 11. Since the same film as the signal line 25 is used for the wiring 30, the wiring 30 can be ormically contacted with the signal line 25 at the contact hole 28. Consequently, ormic contact with the transparent conductive film covered with the insulating film can be stably and effectively obtained.</p>
申请公布号 JP3053093(B2) 申请公布日期 2000.06.19
申请号 JP19880188449 申请日期 1988.07.29
申请人 发明人
分类号 G02F1/136;G02F1/1365;G02F1/1368;H01B5/14;H01L27/12;(IPC1-7):G02F1/136 主分类号 G02F1/136
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