| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor wafer which is possessed of a high- brightness mirror front surface and a rear surface where micro ground streaks are present, by a method wherein both the surfaces of the wafer are etched, one of the surfaces is flattened by cutting, both the surfaces are polished, the plane-polished surface is made to serve as the rear of the wafer, and the front surface is mirror-polished. SOLUTION: The one surface 1a of a wafer 1 which is cleaned or etched is plane-ground. Processing strains 2 and ground streaks 4 are induced in the plane-ground surface 1a of the wafer 1. Then, both the surfaces 1a and 1b of the wafer 1 whose one surface 1a is ground are polished to remove processing strains 2 and etching pits 3, but ground streaks 4 are left on the plane-ground surface 1a. Then, before or after a both-surface polishing process, the periphery of the wafer 1 is mirror-polished to remove processing strains 2 and etching pits 3. Then, the plane-polished surface 1a is made to serve as the rear surface of the wafer 1, and the plane-ground front surface of the wafer 1 is mirror- polished.
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