| 摘要 |
PROBLEM TO BE SOLVED: To obtain a good burying property of Al in vias by setting the heating temp. of a semiconductor substrate for degassing a layer insulating film in a burying process to a value not greater than the layer insulating film forming temp. SOLUTION: A first metal wiring 1 on a semiconductor substrate having formed elements, a layer insulating film 2 is formed by a plasma CVD method, etc., wherein the heating temp. of the semiconductor substrate for species 3 for degassing the layer insulation film 2 is set at value not greater than the layer insulating film forming temp., i.e., less than the layer insulation film forming temp. by 0-400 deg.C and higher than or equal to 200 deg.C for heating. Then vias are formed, Al or Al-based alloy is filled in the vias, and a second metal wiring is formed at the same time. Thus the burying property of Al in the vias becomes satisfactory.
|
