Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse

摘要

Silicon has a total oxygen content of 8 x 10<17> - 1 x 10<19> atom/cm<3> and a density on displacement of 1 x 10<5> - 5 x 10<7> cm<-2>. An Independent claim is also included for a process for the production of the silicon comprising saturating molten silicon in contact with silicon monoxide and/or silicon dioxide with oxygen and/or treating the silicon melt before or during crystallization. The density can be adjusted via the cooling speed of the silicon.