| 摘要 |
PROBLEM TO BE SOLVED: To emit light with high luminance by specifying the magnitude of atomic concentration among a light emitting layer and a p-type and an n-type clad layer which constitute a p-n junction type DH structure, having the light emitting layer formed of on indium-containing III nitride semiconductor having a multilayer structure consisting of a main phase and a sub phase. SOLUTION: The magnitude of the quantity of an oxygen impurity for an n-type clad layer 103 and a p-type clad layer 106, which constitute a p-n junction type light emitting section of a nitride semiconductor light emitting element and an n-type light emitting layer of a polyphase structure, is addely specified. More specifically, while the n-type clad layer 103 has oxygen atomic concentration of Qc (atoms/cm3) and the p-type clad layer 106 has oxygen atomic concentration of Qp (atoms/cm3), the light emitting layer 10 is formed of an indium- containing III nitride semiconductor having oxygen atomic concentration larger than Qc or Qp. By including oxygen atoms in the light emitting layer 10 of a polyphase structure formed of the indium-containing III nitride semiconductor, light can be emitted stably with high intensity. |
