FABRICATION OF SEMICONDUCTOR DEVICE FOR IMPROVING ETCHING LAG PHENOMENON

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which etching lag phenomenon is improved. SOLUTION: A method for fabricating a semiconductor device comprises a step for forming a photoresist pattern 14 on a layer 12 to be etched, a step for forming an etching rate increasing film of the layer 12 on the side wall of the photoresist pattern 14, and a step for forming a contact window by etching the layer 12 using the photoresist pattern on which the etching rate increasing film is formed as an etching mask.