| 摘要 |
PROBLEM TO BE SOLVED: To prepare a low-resistance and highly transparent conductive film with which the productivity can be improved, by preparing a silicon oxide film and a crystallized silicon film on a silicon nitride film formed on an insulating substrate. SOLUTION: A silicon nitride film 2 is deposited with a plasma CVD technique on whole of a surface of a glass substrate 1. A silicon oxide film is subsequently formed as an underlying oxide film 3. Then, an amorphous silicon film 4 is deposited with a plasma CVD technique or LPCVD technique, and further a protective layer 5, which is either a silicon oxide or a silicon nitride film, is formed with a CVD technique. The silicon film 4 is irradiated with a pulsed laser light to improve the crystallinity. The protective layer 5 is removed to pattern the silicon film into an island-shaped region 6. A gate oxide film 7 is formed by annealing a film deposited by decomposing TEOS or by sputtering in oxygen atmosphere. Aluminum is electron-beam evaporated on the gate oxide film 7 to form a gate electrode 8, through which a current is flowed to form an anodic oxide layer 9 on its surrounding. |
