| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical sensor of easy process and high detection precision. SOLUTION: A Pd is provided as a Schottky electrode 3 on an SiC semiconductor substrate 1. Here, an alloy layer 4 which is the reaction product of the metal of Schottky electrode 3 is formed in the SiC semiconductor substrate 1. An SiC semiconductor is an n-type semiconductor, and a high melting-point metal for the Schottky electrode 3 is preferred to be selected among Au, Ag, Pd, Cr, Co, Ti, W, Pt, Al, Ni, Mo, Cs, and Mn.
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