| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, which contributes to a reduced output capacitance Coss through a reduced Cds(drain-substrate capacitance). SOLUTION: A p-type well region 4 and an n+-type drain region 5 are formed with a space inbetween, in an n-type semiconductor layer 3 of an SOI(silicon-on- insulator)substrate, with an n+-type source region 6 formed in the p-type well region 4, A drain electrode 8 is so formed as to be electrically connected to the n+-type drain region 5, a source electrode 9 is so formed as to be electrically connected to the p-type well region 4 and n+-type source region 6, and a gate electrode 11 of polysilicon having conductivity is formed via a gate oxide film 10 on a p-type well region 4 of the n-type semiconductor layer 3 which is between the n+-type drain region 5 and n+-type source region 6. The n-type semiconductor layer 3 constitutes a drift region. Here, an n-type semiconductor region 12 is formed in the drift region in the n-type semiconductor layer 3 at the interface between the n-type semiconductor layer 3 and an insulating layer 2.
|
