| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which enables fill the interior of a microscopic contact hole with an Al material with good reproducibility and is adaptable to batch processing. SOLUTION: An interlayer insulating film 10 is deposited on a semiconductor substrate 1. A contact hole 11 is formed on the film 10. A wiring layer 17 consisting of an Al layer or an Al alloy layer is deposited on the film 10. After the deposition of the layer 17, the surface of the layer 17 is covered with a protective conductive film, without exposing the surface of the layer 17 to the atmosphere. The substrate 1 is subjected to high-temperature and high- pressure treatments, and the interior of the hole 11 is filled with the layer 17.
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