| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device of a trench isolated structure, wherein the manufacturing process is simplified without deteriorating uniformity of polishing. SOLUTION: A silicon oxide film 5 is accumulated in a HDP-CVD method, and continuously a polysilicon film 6 is accumulated in the thickness, in which the polysilicon film 6 in a region over a projecting part region is removed in a first CMP process, meanwhile the polysilicon film 6 in a recessed part region remains, and further the polysilicon film 6 functions as a mask of etching process in the later stage. Then the first CMP process is performed, and with the polysilicon film 6 after the first CMP process as a mask, etching process is performed for the silicon oxide film 5, and the silicon oxide film 5 which lies in the region over the projecting part region removed, and then a second CMP process is further performed to cause the top of a semiconductor substrate 1 to be flattened.
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