| 摘要 |
PROBLEM TO BE SOLVED: To enable a nitride III-V compound semiconductor layer to be enhanced in carrier concentration and lessened in resistance, by a method wherein the nitride III-V compound semiconductor layer is doped with P-type impurities and oxygen, and a ratio V/III is kept lower than a specific value when the nitride III-V compound semiconductor layer is grown. SOLUTION: A GaN buffer layer 22 is grown on a C-surface sapphire substrate 21 at a low temperature. A GaN buffer layer 23, an N-type GaN contact layer 24, an N-type AlGaN clad layer 25, an N-type GaN optical waveguide layer 26, an active layer 27 of GaInN/GaN multi-quantum well structure, a P-type AlGaN cap layer 28, a P-type GaN optical waveguide layer 29, a P-type AlGaN clad layer 30, and a P-type GaN contact layer 31 are successively grown. At this point, a P-type nitride III-V compound semiconductor layer is grown as doped with P-type impurities and oxygen. Furthermore, the P-type GaN contact layer 31 is made to grow with a ratio V/III kept smaller than 6,000. |
