STRUCTURE FOR SEMICONDUCTOR PRESSURE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a high-quality semiconductor pressure sensor which is highly accurate and superior in stability. SOLUTION: A coefficient of thermal expansion of a glass pedestal 2 to be anodically joined to a sensor chip 1 where a diaphragm 7 with a strain gage resistor 6 is formed is not smaller than a coefficient of thermal expansion of the sensor chip 1, schematically 1.2 times or smaller. A solder 4 for connecting the glass pedestal 2 with a metallic package 3 via a metallize film 8 has a melting point of approximately higher than 240 deg.C-approximately 300 deg.C, with a coefficient of thermal expansion of approximately smaller than 22 ppm/ deg.C and a thickness of approximately 25-100μm.