| 摘要 |
PROBLEM TO BE SOLVED: To increase a speed of functioning as a switching element and scarcely accompany a power loss in a semiconductor layer as a drain region by a method wherein an insulation layer is formed so as to extend in an aspect of coming into contact with between a semiconductor substrate and a semiconductor region. SOLUTION: A source electrode layer 8 is coupled to an ohmic at a side counter to a side of a semiconductor substrate 1. Semiconductor regions 4, 5 have previously been formed on a lamination body of a gate insulation layer 6 and a gate electrode layer 7, and an interlayer insulation layer 11 burying a window 10 for facing the semiconductor regions 4, 5 outwardly is formed, and a window 12 for facing the semiconductor regions 4, 5 outwardly is formed in a part of burying the window 10. In this state, the source electrode layer 8 is formed on the interlayer insulation layer 11 so as to couple with the semiconductor regions 4, 5 through the window 12. Furthermore, a drain electrode layer 9 is coupled in an ohmic relation at a side counter to a side of a semiconductor layer 2 in the semiconductor substrate 1. Furthermore, differing from the normal case, an insulation layer 13 is formed within a semiconductor layer 2 in a drain region so as to extend while coming into contact with between the semiconductor substrate 1 and a semiconductor region 3 as a channel forming region.
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