| 摘要 |
PROBLEM TO BE SOLVED: To lower resistance by implanting impurities after the final oxidation step, while suppressing oxidized amount of traces between pixels and to eliminate the need for increasing the thickness of traces between the pixels with a view toward lowering the resistance, when the number of picture elements is increased. SOLUTION: This method of manufacturing is for the formation a CCD imager (solid-state image pickup device), which is provided with multiple photoreceiving detectors 6 arranged vertically and horizontally on a substrate 5 with spaces for photoelectric transfer, vertical transfer electrodes on each of the photoreceptive detector 6 and traces 12 between pixels formed between horizontal lines of photoreceptive detectors 6 and connecting vertical transfer electrodes 11 for each horizontal line of the photoreceptive detectors 6. During the manufacturing process of the CCD imager, after completing all the manufacturing steps of a CCD imager by which the traces 12 between pixels are oxidized, impurities are ion-implanted into the traces 12 between pixels.
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