| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a second metal wiring formed in a contact hole and to improve the characteristics appropriate as a semiconductor device. SOLUTION: A titanium film 4 and a titanium nitride film 5 are formed in order on the inner surface of a contact hole 3, and germanium ions are implanted in the film 5 on the sidewall of the hole 3 to reduce the film thickness of this ion-implanted part of the film 5. After that, a tungsten plug 7 is buried in the contact hole 3 using a blanket tungsten CVD method.
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