发明名称 POLISHING METHOD OF PLATINUM METAL FILM AND CELL FORMING METHOD OF SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To enable a platinum metal film to be formed into a fine pattern and easily flattened in a short time by a method wherein a polished part of a platinum metal film provided to a work is converted into compound of high reactivity, and the converted part to be polished is polished through a chemical and mechanical polishing method. SOLUTION: An Ru film 16 except the inside of an opening 14 is chloridized into an RuClx, 17 by heating it at a temperature of approximately 500 deg.C or above in a Cl2 atmosphere. At this point, it is preferable that a protective film of SiO2 or the like is selectively deposited on an Ru surface inside the opening 14 so as to prevent a chloridizing reaction from occurring. Thereafter, the RuClx 17 and a TiN/Ti film 15 are polished through a chemical mechanical polishing method with slurry which contains hydrochloric acid as solvent that dissolves the RuClx 17 to be removed from a second interlayer insulating film 12, and the Ru film 16 and the TiN/Ti film 15 are left only inside the opening 14 to serve as a lower electrode.
申请公布号 JP2000164545(A) 申请公布日期 2000.06.16
申请号 JP19980332548 申请日期 1998.11.24
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 KAWAGUCHI AKIZANE
分类号 H01L27/04;H01L21/304;H01L21/822;H01L21/8242;H01L27/108 主分类号 H01L27/04
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