| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V nitride compound semiconductor substrate with satisfactory characteristics and a large area and a method for manufacturing this substrate, and a semiconductor device with satisfactory characteristics, using this substrate and a method for manufacturing this device. SOLUTION: An Al2O3 crystal layer 2 is grown on an Si substrate 1, and a III-V nitride compound semiconductor layer 4 is grown on this Al2O3 crystal layer 2, so that a III-V nitride compound semiconductor substrate can be manufactured. The facial azimuth of the Si substrate 1 is defined as (111) or (100). The Al2O3 crystal layer 2 is aγ-Al2O3 crystal layer orα-Al2O3 crystal layer. The Al2O3 crystal layer 2 can be formed as a continuous film or an island- shaped film. Also, the Si substrate 1 or the Al2O3 crystal layer 2 can be removed, after the substrate is manufactured. Another crystal substrate can be substituted for the Si substrate 1, and an amorphous substrate can be substituted for the crystal substrate. Then, a GaN system laser or a GaN system FET is manufactured by using this III-V nitride compound semiconductor substrate.
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