发明名称 RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of effectively preventing occurrence of halation and stationary waves at the time of forming, on a highly reflective film like a metallic film, a positive chemically amplifiable resist having a fundamental composition comprising an acid generating compound by irradiation with radiation and a resin to be increased in solubility in an aqueous alkaline solution by action of an acid. SOLUTION: This positive resist film is formed on a substrate by mixing (C) the ester of a phenolic compound having a molecular weight of <=1000 with a naphthoquinone-1,2 diazidosul-fonic acid, as an antihalation agent with the positive chemically amplifiable resist essentially comprising (A) the acid generating compound by irradiation with radiation and (B) the resin to be increased in solubility in the aqueous alkaline solution by acyltion of an acid, in a (C) amount of 0.5-20 weight % of (B) to form a resist film and then, it is exposed through a mask pattern to KrF excimer laser beams in an exposure device and subjected to postexposure heat treatment, and development processing.
申请公布号 JP2000162775(A) 申请公布日期 2000.06.16
申请号 JP20000004963 申请日期 2000.01.13
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SATO KAZUFUMI;NITTA KAZUYUKI;YAMAZAKI AKIYOSHI;SAKAI TOMOAKI;NAKAYAMA TOSHIMASA
分类号 G03F7/039;C08K5/42;C08L25/18;G03F7/004;H01L21/027 主分类号 G03F7/039
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