| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high current drive capability by lowering the resistance of an offset-drain diffused layer. SOLUTION: Phosporus ions and arsenic ions are implanted on the surface layer of a semiconductor wafer 11 with an ion implantation masked by a gate electrode 13 on the semiconductor wafer 11. A resist pattern 14 covering over the gate electrode 13 to one flank of the gate electrode 13 is formed, and arsenic ions are implanted on the surface layer of the semiconductor wafer 11 with an ion implantation masked by the resist pattern 14 and the gate electrode 13. With an activated heat-treatment, a source diffused layer 15 and a drain diffused layer 16 comprising diffused arsenic ion are formed, and an offset drain layer 17, comprising a two-layer structure of a first layer 17a comprising a diffused phosphorus ion and a second layer 17b which consists of diffused arsenic ions, is formed between the gate electrode 13 and the drain-diffused layer 16.
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