发明名称 PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently form high density plasma necessary for etching an oxide film, from the viewpoint of energy saving and costs reduction. SOLUTION: Microwave of a UHF band are emitted from the periphery of a disc-like plate antenna 5 to generate plasma due to electronic cyclotron resonance, and also the plate thickness of a gas supply plate 4 provided on a face at the plasma side of the antenna 5 is increased by more than the skin depth of the microwave. Since an oxide film is etched by the use of low electronic temperature high-density plasma, etching results of superior characteristics are obtained, and energy-saving and cost-reducing device can be obtained.
申请公布号 JP2000164563(A) 申请公布日期 2000.06.16
申请号 JP19980335307 申请日期 1998.11.26
申请人 HITACHI LTD 发明人 TAKAHASHI NUSHITO;SASAKI ICHIRO;MAEDA KENJI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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