| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process and improve a yield, by forming an amorphous silicon insulating film as a mask on a gate electrode which is formed on a surface of an insulating substrate, doping impurities through the remained mask, and forming a polycrystalline source and a drain area. SOLUTION: A gate electrode 102 is patterned on a heat-resistant non-alkaline glass substrate 101 through a mask (1). If necessary, an oxide film 103 is formed on a surface of the gate electrode to improve insulation, and then, a gate insulating film 104 is formed. Subsequently, an amorphous, semi-amorphous, microcrystalline, polycrystalline, or an intermediate type silicon thin film is formed. The film is patterned through a mask (2) to form a semiconductor area 105. And then, a coating is formed, which acts as a mask upon receiving a laser beam. For instance, a silicon nitride film containing a large amount of silicon is formed and patterned through a mask (3). In this state, an impurity area 108 is selectively formed on the semiconductor area 105 by ion implantation or ion doping. |
