| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which satisfactory filling of a via hole is made so that a high wiring yield is obtained. SOLUTION: This method includes a process, wherein a silicon oxide film 14 to which alkyl group is added, is formed on the steps of a lower metal wiring 12', a process wherein the silicon oxide film to which alkyl group is added is removed by a film thickness which does not leave the silicon oxide film to which alkyl group is added, on the lower metal wiring 12' and leaves it between the wiring, a process wherein a silicon oxide film 15 is further formed as an upper layer, and a process wherein a via hole 17 for connecting to the upper layer is formed.
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