| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need for changing the setting of heating conditions even when the thickness and quality of an insulating film are changed by measuring the amount of H2O contained in gas inside a heating chamber that is being heat-treated, and completing the heating treatment after the measurement value becomes smaller than a preset threshold. SOLUTION: The heat treatment of a wafer 7 is started by a heater 13. Every specific time from a point in time when the specific time passes from the start of heating, a signal S1 from a mass spectrograph 3 is outputted to a process controller 4, and the peak strength of H2O constituent is compared with a preset threshold in the process controller 4. When the peak strength becomes equal to or less than the threshold, a driving signal S2 is outputted to a carrier controller 5, a carrier start signal S3 is outputted to a robot arm 6, and at the same time the wafer 7 in a heating chamber 1 is carried to the treatment device of the next process, thus sufficiently eliminating water even when the setting of heating conditions is changed according to change in an insulating film.
|
