发明名称 METHOD FOR CLEANING SILICON SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To efficiently eliminate particles adhered to a surface of a silicon substrate. SOLUTION: A main surface of a silicon substrate 10 is set in the vertical direction, and the silicon substrate 10 is impregnated in an organic acid or organic acid salt solution 12, or a mixed solution 12 in which hydrofluoric acid is mixed with the solution. The main surface of the substrate 10 is set to the vertical direction, and the substrate 10 is pulled up from the dipped solution 12 at a rate of 5 to 50 mm/sec. When the substrate 10 is pulled up from the impregnated solution 12, the same solution as the dipped solution 12 is supplied to the surface of the substrate so that the solution film is formed on the entire surface of the substrate.
申请公布号 JP2000164549(A) 申请公布日期 2000.06.16
申请号 JP19980338595 申请日期 1998.11.30
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 TAKADA RYOKO;TAKAISHI KAZUNARI
分类号 B08B3/02;B08B3/08;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B3/02
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