| 摘要 |
PROBLEM TO BE SOLVED: To easily remove a native oxide film by a method wherein a poly Si layer is formed on the native oxide film, the native oxide film is turned into amorphous Si by implantation of ions, and then the amorphous Si is turned into single crystal Si through a thermal treatment. SOLUTION: An SiO2 layer 6 is provided on the surface of a single crystal Si substrate 2 to serve as the gate oxide film of a MOSFET. Then, a poly Si layer 8 is formed on the SiO2 layer 6, a gate structure and word lines are formed, and an active region 12 is formed by ion implantation. Then, an insulating layer 14 is formed on the Si substrate 2, and when a contact hole 16 is bored in the insulating layer 14 to make the active region 12 come out, a native oxide film 18 is grown on an Si surface. A poly Si layer 20 is formed on the inner wall of the hole 16 and the surface of the insulating layer 14, and then ions are implanted to turn the native oxide film 18 into amorphous Si. Then, a conductive layer 24 is formed on the Si layer 20 so as to fill up the hole 16, a dielectric film 28 and a conductive layer 30 are formed on the conductive layer 24, and a thermal treatment is carried out so as to turn amorphous Si into a single crystal Si 32.
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