| 摘要 |
PROBLEM TO BE SOLVED: To achieve a more stable horizontal mode, higher output and longer life of a semiconductor light emitting element using nitride-based III-V compound semiconductor. SOLUTION: In a GaN semiconductor laser, an AlGaN buried layer 9 is provided to bury both sides of a ridge stripe portion formed on the upper layer portion of a p-type AlGaN clad layer 7. After the upper layer portion of the p-type AlGaN clad layer 7 and a p-type GaN contact layer 8 are etched by using the SiO2 layer 21 as an etching mask to pattern them, the AlGaN buried layer 9 is unselectively grown with the SiO2 layer 21 formed on the ridge stripe so that both sides of the ridge stripe are buried. Furthermore, the AlGaN buried layer 9 is etched by using the SiO2 layer 21 as an etching stop layer to remove the portion of the AlGaN buried layer 9 from the ridge stripe. |
