| 摘要 |
PROBLEM TO BE SOLVED: To realize a plasma etching method capable of reliably fining a layer to be processed made of a ferroelectric thin film, etc. SOLUTION: This plasma etching method is constituted by a composite member 11, comprising a basic material 12 filled up with an aluminum-system material in a composition of a ceramic member, and a ceramic layer 13 provided on a surface of this basic material 12. This method comprises the steps of by using a basic body mounting stage having an electrostatic chuck function and provided with temperature control means 14, 15, a layer to be processed comprising at least one layer selected from among a group constituted by a high dielectric thin film, a ferroelectric thin film, and an electrode material layer is formed on the basic body. Thereafter, an etching mask comprising an insulation material selected from a group constituted by SiO2, SiN, SOG, SiON, and a low dielectric insulation material is provided on the layer to be processed, and next the basic body is mounted on a basic body mounting stage to plasma-etch the layer to be processed. |
