| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor and its manufacturing method which can make a perceivable range large. SOLUTION: A semiconductor acceleration sensor has a frame 12, a warping part 10, a weight part 13 which is supported pendant at a central part 10a, a support member 14 which supports a lower side of the frame 12 and of which inside surface faces the sidewall of the weight part 13 beyond a curved part, an incised trench 9, which is formed between the weighting part 13 and a beam part 10b and a piezo resistor 5, which detects an acceleration by a strain generated at the warping part 10 transferring to an electrical signal, and the incised trench 9 is formed by p+-type embedded sacrificial layer 3 to be removed through etching. Here an interval (width) which is defined between the beam part 10b and the weight part 13 is made nearer to the frame 12 wider than near a neck part 13a.</p> |
