| 摘要 |
PROBLEM TO BE SOLVED: To prevent impurity of a gate electrode from penetrating an insulting film without a reduction in a driving force of a transistor, by disposing a peak of a specific binding, in which a specific atom is bound to a second adjacent atom, at a position in a nitrogen oxide layer inward by a specific atom layer or more from an interface between a semiconductor substrate and the nitrogen oxide film. SOLUTION: When a gate insulating film 14 is formed, an NO molecular makes an Si-NO binding in an Si-O network of a sub-oxide area, which is formed around an interface between a thin-film gate insulating film and a silicon substrate 11. Or the NO molecular is divided into nitrogen and oxygen so as to form an Si-N binding and an Si-O binding, so that nitrogen is incorporated into an oxide film. Meanwhile, nitrogen is incorporated into the gate insulating film 14 with a profile of a peak concentration, which is positioned higher than the interface of the silicon substrate 11, by sufficiently paying attention to an atmosphere of gas. In the gate insulating film 14, a concentration of added nitrogen has a surface density of 5×1013/cm2 or more. When Si3N4 corresponds to one atom layer, the upper limit is approximately 3×1015/cm2.
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