| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a junction leak is prevented from occurring, by a method wherein boron of specific concentration or above is introduced into an b-type layer which is located within a range of a depletion layer that extends from the junction surface of a pn junction. SOLUTION: A silicon oxide film 2 is formed on a p-type silicon substrate 1 which includes interstitial oxygen, and a resist pattern 4 with an opening located in a region 3 which serve as an n-type well layer is formed thereon. n-type impurity ions 5 are implanted into the surface of the substrate 1 using the resist pattern 4 as a mask, and then the resist pattern 4 is removed. Then, boron ions 6 are implanted into all the surface of the substrate 1. The substrate 1 is annealed under a prescribed condition, and an n-type well layer 8 and a p-type well layer 9 as deep as prescribed are formed. Furthermore, boron of density above about 1.0×1017 cm3 is introduced into the n-type well layer 8. By this setup, a junction leak can be restrained from occurring even if oxygen deposits 11 are formed inside the n-type well layer 8 and the p-type well layer 9.
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