| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration of an area near an oxide film in a switching element, when forming a defective region for reducing the turn-off time of switching characteristics by irradiation of ions. SOLUTION: A semiconductor device is provided with a semiconductor layer 10, where switching element 102-104, 106, 107, and 110 and a defective region 112 are formed and a source electrode 110 that is formed by either a heavy metal such as titanium, chromium, tungsten, cobalt, nickel, and molybdenum, an alloy of a heavy metal, or a compound of the heavy metal and a semiconductor. 4He2+ is applied to the semiconductor layer 10 via the source electrode 110, thus forming the defective region 112, and hence reducing the amount ofγ-rays generated from the source electrode 110 and forming a defective region, without deteriorating an region near a gate oxide film 103 in the switching elements.
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