发明名称 |
START-UP CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a start-up circuit that can generate an optimum start-up signal for each chip corresponding to dispersion in a characteristic of TRs due to variations in the manufacture process. SOLUTION: In the start-up circuit 11, a 1st MOS transistor(TR) TN1 is turned on/off in a prescribed timing at a control voltage Vn, based on an external power supply until the external power supply reaches a usual operating voltage after rising of the external power supply, and the circuit 11 generates a start-up signal(STTZ), based on the on/off. The start-up circuit 11 is provided with a correction circuit 13. The correction circuit 13 corrects the control voltage Vn in response to dispersion in a threshold voltage of the 1st MOS TR TN1.
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申请公布号 |
JP2000165220(A) |
申请公布日期 |
2000.06.16 |
申请号 |
JP19980336962 |
申请日期 |
1998.11.27 |
申请人 |
FUJITSU LTD;FUJITSU VLSI LTD |
发明人 |
KOBAYASHI ISAMU;SUGAMOTO HIROYUKI |
分类号 |
H03K17/22;(IPC1-7):H03K17/22 |
主分类号 |
H03K17/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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