发明名称 START-UP CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a start-up circuit that can generate an optimum start-up signal for each chip corresponding to dispersion in a characteristic of TRs due to variations in the manufacture process. SOLUTION: In the start-up circuit 11, a 1st MOS transistor(TR) TN1 is turned on/off in a prescribed timing at a control voltage Vn, based on an external power supply until the external power supply reaches a usual operating voltage after rising of the external power supply, and the circuit 11 generates a start-up signal(STTZ), based on the on/off. The start-up circuit 11 is provided with a correction circuit 13. The correction circuit 13 corrects the control voltage Vn in response to dispersion in a threshold voltage of the 1st MOS TR TN1.
申请公布号 JP2000165220(A) 申请公布日期 2000.06.16
申请号 JP19980336962 申请日期 1998.11.27
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 KOBAYASHI ISAMU;SUGAMOTO HIROYUKI
分类号 H03K17/22;(IPC1-7):H03K17/22 主分类号 H03K17/22
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