| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent degradation in image quality caused by variation in current capacity of a thin-film transistor provided at each pixel. SOLUTION: A pixel 13 is formed using a thin-film transistor 14 at an intersection between gate wires 11-1, 11-2, 11-3, and 11-4 and signal wires 12-1, 12-2, 12-3, and 12-4, etc., wired into a matrix form, with a light-shielding layer and a control part 20 connected to it provide. The light-shielding layer is provided on the side counter to a gate electrode with a silicon layer (semiconductor layer), where a source and drain are formed of the thin-film transistor 14 in between. The control part 20 controls a biasing electric potential of the light- shielding layer, so that the current voltage of the thin-film transistor 14 becomes a prescribed value.</p> |
