| 摘要 |
PROBLEM TO BE SOLVED: To obtain gate dielectric structure with low defect density. SOLUTION: An electronic device is manufactured on a semiconductor substrate, containing a dielectric layer that is formed between first and second structures. This method includes a process for causing a layer 204 containing an oxide on the first structure (a substrate 202) to grow, a layer 206 containing silicon to grow on the layer containing the oxide, exposing essentially the entire layer containing silicon to an atmosphere containing oxygen and nitrogen at a substrate temperature of approximately 700 deg.C-800 deg.C for oxidation, and a second structure 214 to be formed on the layer containing oxidized silicon. A process for oxidizing essentially the entire layer containing silicon is preferably made by exposing the layer containing silicon to an atmosphere, containing N2O at a wafer temperature of approximately 700 deg.C-800 deg.C or containing NO at approximately 700 deg.C-800 deg.C. Nitrogen is preferably taken into the region between the layer containing oxide and the first structure and/or between the layer containing oxide and the oxidized layer containing silicon.
|
