| 摘要 |
PROBLEM TO BE SOLVED: To form an AlGaN single-crystal layer whose crystallinity is satisfactory. SOLUTION: This nitride semiconductor deposited substrate is provided with a low-temperature deposition buffer layer 4 whose composition is AlxGa1-xN (where x is a number which is 1 or less and 0 or larges) and a single-crystal layer 5 deposited just on the low-temperature deposition buffer layer, whose composition is AlyGa1-yN (y is a number which is 1 or less and 0 or larger). In this case, x is set so as to be made lager than the larger of y-0.3 and 0. Thus, the deposited substrate in which lattice defects are reduced can be formed, and the structure and characteristics of not only an optical element such as a laser diode but also an element using plural III nitride semiconductors can be improved. |
