| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a capacitance element of high accuracy, as a structure suitable for a fine working process, and a manufacturing method of the device. SOLUTION: This semiconductor device is provided with a capacitance element constituted of a first insulating film 12 which is formed on a semiconductor substrate 11 and has a trench 14, whose bottom does not reach the substrate, a lower electrode 15a composed of a first metal layer embedded and formed in the trench, a capacitance insulating film 16a composed of a second insulating film formed on the lower electrode, and an upper electrode 18a composed of a second metal layer, which is formed on the capacitance insulating film above the lower electrode.
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