| 摘要 |
PROBLEM TO BE SOLVED: To achieve a simple process, fewer masks, and a larger yield, by providing a silicon semiconductor film, which includes a pair of impurity areas and a channel forming area, on a gate insulating film formed on a gate electrode on a substrate, and aligning a boundary of the areas along an end of the mask. SOLUTION: A gate insulating film 104 is formed so as to cover a gate electrode 102, and a semiconductor film 105 is formed thereon. The upper part of the gate electrode 102 is substantially intrinsic so as to act as a channel forming area 109. The other area acts as an N or P-type source/drain. Moreover, the part acting as the channel forming area 109 may be amorphous, semi- amorphous, microcrystalline, polycrystalline, or an intermediate type. When preventing off state current, an amorphous area is desirable. Meanwhile, the part acting as the source/drain is made of crystalline silicon whose resistance is sufficiently small. A visible ray and a near-infrared ray, i.e., intense light with a wavelength of 4 to 0.5μm is emitted for a short time so as to crystallize the semiconductor. |
