| 摘要 |
<p>PROBLEM TO BE SOLVED: To actualize a semiconductor storage device having a sense amplifier which can obtain an accurate output, even if the source voltage is varied to a high voltage. SOLUTION: This semiconductor storage device has a sense amplifier 41, and the sense amplifier is provided with a load resistance part 42 having loading transistors TL1 and TL2, one of which can be switched and connected with different load characteristics and a load transistor switching signal generating circuit, which outputs a switching signal for selecting the connection of the loading transistors TL1 and TL2 according to the source voltage VCC.</p> |
