| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which is reducible in chip size by decreasing the number of fuses. SOLUTION: The semiconductor storage device is provided with a memory cell array which is sectioned into blocks, redundant memory cells which replaces a defective memory cell in the memory cell array, and a redundant memory cell selecting circuit which replaces a defective memory cell by a redundant memory cell. This redundant memory cell selecting circuit is provided with n-channel MOS transistors N00 to N03 which input a block select signal BLK at their gates, p-channel MOS transistors P0 to P3 which input a block select signal BLKB as the reverse logic of the block select signal BLK, and fuses F0 to F3 which are connected between the sources and drains of the transistors N00 to N03 and P0 to P3.</p> |
