| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask alignment method for improving the manufacturing accuracy of a semiconductor device including multilayer interconnection. SOLUTION: In a mask alignment method for matching a mask 17 for photolithography where a reference mark 18 corresponding to a reference mark 14 is formed on a circuit pattern 13 where the reference mark 14 on a semiconductor substrate 10 is formed, an amount of residual offset A when transferring the circuit pattern 13 is obtained, an amount of correctionαfor the circuit pattern 13 of the mask is obtained by test exposure in tentative alignment before aligning the mask 17 onto the circuit pattern 13, and the tentative alignment of the mask 17 is corrected (Y) based on the amount of residual offset A and the amount of correctionα. |
