| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of an abnormal shape of silicon films and residues due to a difference between etching rates at the time when the silicon films of different conductivity types are etched simultaneously. SOLUTION: One conductivity-type impurities are introduced in a silicon film 3 of a lower layer and other conductivity-type impurities and introduced in a silicon film 6 of an upper layer. The other conductivity-type impurities may be introduced in the region other than a resist mask on the film 6. After this, the films 3 and 6 are etched, whereby the difference between etching rates at etching of the films 3 and 6 is offset.
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